feb.1999 mitsubishi thyristor modules tm200rz/ez/gz-m,-h,-24,-2h high power general use insulated type outline drawing & circuit diagram dimensions in mm application dc motor control, nc equipment, ac motor control, contactless switches, electric furnace temperature control, light dimmers tm200rz/ez/gz-m,-h,24,-2h ? i t (av) average on-state current .......... 200a ? i f (av) average forward current .......... 200a ? v rrm repetitive peak reverse voltage .......... 400/800/1200/1600v ? v drm repetitive peak off-state voltage .......... 400/800/1200/1600v ? mix double arms ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 3 f 6.5 3?8 a 1 k 1 a 2 k 2 k1 g1 18 16 18 16 32 30 68.5 30 68.5 150 tab#110, t=0.5 40 39 32 23 7 a 1 cr k 1 k 2 sr a 2 k 1 g 1 (rz) (ez) (gz) a 1 cr k 1 k 2 sr a 2 k 1 g 1 a 1 cr k 1 k 2 sr a 2 k 1 g 1 20 6 9 label (rz type) (rz type) (bold line is connective bar.)
feb.1999 absolute maximum ratings unit v v v v v v mitsubishi thyristor modules tm200rz/ez/gz-m,-h,-24,-2h medium power general use insulated type m 400 480 320 400 480 320 symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage unit a a a a 2 s a/ m s w w v v a c c v nm kgcm nm kgcm g conditions single-phase, half-wave 180 conduction, t c =67 c one half cycle at 60hz, peak value value for one cycle of surge current v d =1/2v drm , i g =1.0a, t j =125 c charged part to case main terminal screw m8 mounting screw m6 typical value ratings 310 200 4000 6.7 10 4 100 10 3.0 10 5.0 4.0 C40~125 C40~125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 symbol i t (rms) , i f (rms) i t (av) , i f (av) i tsm , i fsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg v iso parameter rms current average current surge (non-repetitive) current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature isolation voltage mounting torque weight voltage class electrical characteristics unit ma ma v v/ m s v v ma c/w c/w m w limits symbol i rrm i drm v tm , v fm dv/dt v gt v gd i gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current forward voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance contact thermal resistance insulation resistance test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t j =125 c, i tm =i fm =600a, instantaneous meas. t j =125 c, v d =2/3v drm t j =25 c, v d =6v, r l =2 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =2 w junction to case (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) measured with a 500v megohmmeter between main terminal and case min. 500 0.25 15 10 typ. max. 30 30 1.35 3.0 100 0.2 0.1 note: items of the above table applies to the thyristor part and the diode part as circled in the following tables. h 800 960 640 800 960 640 24 1200 1350 960 1200 1350 960 h 1600 1700 1280 1600 1700 1280
feb.1999 mitsubishi thyristor modules tm200rz/ez/gz-m,-h,-24,-2h high power general use insulated type maximum ratings item thyristor diode v rrm v rsm v r (dc) v drm v dsm v d (dc) i t (rms) i f (rms) i t (av) i f (av) i tsm i fsm i 2 t di/dt item thyristor diode p gm pg (av) v fgm i fgm t j t stg electrical characteristics item thyristor diode i rrm i drm dv/dt v gt v gd v tm v fm i gt r th (j-c) performance curves maximum forward characteristic rated surge (non-repetitive) current gate characteristics maximum transient thermal impedance (junction to case) current (a) gate voltage (v) surge (non-repetitive) current (a) transient thermal impedance ( c/w) conduction time (cycle at 60hz) forward voltage (v) gate current (ma) time (s) r th (c-f) 0 10 1 10 0 10 ? 10 ? 10 ? 10 1 10 0 10 1 10 2 10 4 10 3 10 ? 10 4 10 3 10 2 10 1 10 70 50 30 20 7 5 3 2 0 500 4000 10 1 100 1000 1500 2000 2500 3000 3500 7 5 3 2 7 5 3 2 7 5 3 2 3 2 7 5 3 2 7 5 3 2 4 7 5 4 v gt =3.0v i gt = 100ma i fgm =4.0a p gm =10w v fgm =10v v gd =0.25v p g(av) = 3.0w t j =25? 0.5 7 5 3 2 7 5 3 2 7 5 3 2 1.0 2.0 2.5 1.5 t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.25 0 7 5 3 2 0.05 0.10 0.15 0.20 3 2 4
feb.1999 maximum average power dissipation (single phase halfwave) limiting value of the average current (single phase halfwave) average power dissipation (w) average current (a) average current (a) maximum average power dissipation (rectangular wave) limiting value of the average current (rectangular wave) average current (a) average current (a) average power dissipation (w) case temperature ( c) case temperature ( c) mitsubishi thyristor modules tm200rz/ez/gz-m,-h,-24,-2h high power general use insulated type 0 0 320 40 400 160 80 120 50 100 150 200 250 300 350 200 240 280 q =30 60 90 q 360 270 dc 120 180 30 0 320 40 130 40 280 120 200 80 160 240 50 60 70 80 90 100 110 120 180 dc q =30 q 360 60 270 90 120 0 0 200 320 40 80 120 160 200 240 280 40 80 120 160 q =30 120 90 180 q 360 60 130 50 0 120 200 40 60 70 80 90 100 110 120 80 160 q =30 60 90 q 360 180 120 resistive, inductive load per single element resistive, inductive load per single element resistive, inductive load per single element resistive, inductive load per single element
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